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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3299 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3299 is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION PART NUMBER 2SK3299 2SK3299-S 2SK3299-ZJ PACKAGE TO-220AB TO-262 TO-263 FEATURES *Low gate charge QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A) *Gate voltage rating 30 V *Low on-state resistance RDS(on) = 0.75 MAX. (VGS = 10 V, ID = 5.0 A) *Avalanche capability ratings *Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (Pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 600 30 10 40 1.5 75 150 -55 to +150 10 66.7 V V A A W W C C A mJ Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 IAS EAS Note2 Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 V 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14060EJ1V0DS00 (1st edition) Date Published April 2000 NS CP(K) Printed in Japan The mark * shows major revised points. (c) 1999,2000 2SK3299 ELECTRICAL CHARACTERISTICS(TA = 25C) CHARACTERISTICS Drain Leakage Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 450 V VGS = 10 V ID = 10 A IF = 10 A, VGS = 0 V IF = 10 A, VGS = 0 V di/dt = 50 A/s TEST CONDITIONS VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 5.0 A VGS = 10 V, ID = 5.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 150 V, ID = 5.0 A VGS(on) = 10 V RG = 10 2.5 3.2 0.68 1580 280 25 27 17 66 24 34 8.2 12.3 1.0 1.9 12 0.75 MIN. TYP. MAX. 100 100 3.5 UNIT A nA V S pF pF pF ns ns ns ns nC nC nC V s C TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 50 L VDD TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL PG. RG VDD ID 90 % 90 % VGS VGS Wave Form 0 10 % VGS(on) 90 % IAS ID VDD ID ID Wave Form 0 10 % 10 % = 1 s Duty Cycle 1 % td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA 50 RL VDD PG. 2 Data Sheet D14060EJ1V0DS00 2SK3299 * TYPICAL CHARACTERISTICS (TA = 25 C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 30 25 Pulsed FORWARD TRANSFER CHARACTERISTICS 100 VGS = 10 V 8.0 V 6.0 V ID - Drain Current - A 20 15 10 5 0 0 30 VDS - Drain to Source Voltage - V 10 20 ID - Drain Current - A 10 1 Tch = 125 C 75 C 25 C -25 C 0.1 VDS = 10 V Pulsed 15 40 0.01 0 5 10 VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cutoff Voltage - V | yfs | - Forward Transfer Admittance - S 5.0 100 VDS = 10 V Pulsed Tch = -25 C 25 C 75 C 125 C 4.0 10 3.0 2.0 1 1.0 VDS = 10 V ID = 1 mA 0 -50 0 50 100 150 0.1 0.1 1 10 100 Tch - Channel Temperature - C ID - Drain Current - A RDS (on) - Drain to Source On-State Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 3.0 Pulsed RDS(on) - Drain to Source On-State Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 3.0 2.0 2.0 VGS = 10 V 20 V 1.0 ID = 10 A 5.0 A 1.0 0 0 0 5 10 15 0 1.0 10 ID - Drain Current - A 100 VGS - Gate to Source Voltage - V Data Sheet D14060EJ1V0DS00 3 2SK3299 RDS (on) - Drain to Source On-state Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 3.0 ISD - Diode Forward Current - A 10 2.0 ID = 10 A 5.0 A 1 VGS = 10 V 0V 1.0 VGS = 10 V Pulsed 0 50 100 150 Tch - Channel Temperature - C 0.1 0 -50 0.01 0 0.5 1.0 Pulsed 1.5 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 td(on), tr, td(off), tf - Switching Time - ns 100 SWITCHING CHARACTERISTICS td(off) tf tr td(on) Ciss, Coss, Crss - Capacitance - pF Ciss 1000 10 100 Coss 1 10 Crss VGS= 0 V f=1 MHz 1 0.1 1 10 100 1000 0.1 0.1 VDD = 150 V VGS = 10 V RG = 10 1 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 10 trr - Reverse Recovery Time - s VDS - Drain to Source Voltage - V 14 600 VDD = 450 V 300 V 150 V VGS 12 10 8 6 200 VDS ID = 10 A 0 0 10 20 30 4 2 0 40 1 400 0.1 0.01 0.1 1 10 100 ID - Drain Current - A QG - Gate Charge - nC 4 Data Sheet D14060EJ1V0DS00 VGS - Gate to Source Voltage - V di/dt = 50 A/s VGS = 0 V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 800 16 2SK3299 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 20 40 60 80 100 120 140 160 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 80 60 40 20 0 0 Tch - Channel Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse) PW =1 0 s ID - Drain Current - A 10 RD S( on ) Li te mi d ID(DC) 10 0 s Po we r 1 Di ss ipa tio n 1m s 3m s 10 30 ms 10 ms 0 m s Lim ite d 0.1 1 TC = 25C Single Pulse 10 100 1 000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(t) - Transient Thermal Resistance - C/W 100 Rth(CH-A) = 83.3 C/W 10 Rth(CH-C) = 1.67 C/W 1 0.1 0.01 10 100 1m 10m 100m 1 10 100 1 000 PW - Pulse Width - s Data Sheet D14060EJ1V0DS00 5 2SK3299 100 SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 IAS - Single Avalanche Energy - mJ 10 IAS = 10 A EAS Energy Defrating Factor - % 100 80 60 40 20 0 25 VDD = 150 V RG = 25 VGS = 20 V0 V IAS 10 A =6 6.7 mJ 1.0 RG = 25 VDD = 150 V VGS = 20 V 0 V Starting Tch = 25 C 0.1 100 10 1m 10m 50 75 100 125 150 L - Inductive Load - H Starting Tch - Starting Channel Temperature - C 6 Data Sheet D14060EJ1V0DS00 2SK3299 PACKAGE DRAWINGS (Unit : mm) 1)TO-220AB (MP-25) 3.00.3 10.6 MAX. 10.0 5.9 MIN. 15.5 MAX. 4.8 MAX. 2)TO-262 (MP-25 Fin Cut) 1.00.5 3.60.2 4.8 MAX. 1.30.2 1.30.2 (10) 4 1 2 3 4 123 6.0 MAX. 1.30.2 1.30.2 12.7 MIN. 12.7 MIN. 8.50.2 0.750.3 2.54 TYP. 0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.80.2 0.750.1 2.54 TYP. 0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.80.2 3)TO-263 (MP-25ZJ) (10) 4 1.00.5 8.50.2 4.8 MAX. 1.30.2 EQUIVALENT CIRCUIT Drain (D) 5.70.4 1.40.2 0.70.2 2.54 TYP. 1 2 (0 .5R ) 3 2.54 TYP. ( R 0.8 ) 0.50.2 Gate (G) Body Diode Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 2.80.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) Source (S) Data Sheet D14060EJ1V0DS00 7 2SK3299 * The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8 |
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